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  Datasheet File OCR Text:
 NTE357 Silicon NPN Transistor
RF Power Output PO = 7W @ 175MHz
Description: The NTE357 RF power transistor is designed primarily for wideband large-signal amplifier stages in the 125-175MHz frequency range. Features: D Specified 28V, 175MHz Characteristics - Output Power = 7.0 Watts Minimum Gain = 8.4dB Efficiency = 60% D Characterized from 125 to 175MHz D Includes Series Equivalent Impedances Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0V Collector Current-Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0A Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown V(BR)CEO IC = 200mAdc, IB = 0, Voltage (Note 1) Collector-Emitter Breakdown V(BR)CES IC = 200mAdc, VBE = 0 Voltage Note 1. Pulsed through 25mH inductor 35 65 - - - - Vdc Vdc Symbol Test Conditions Min Typ Max Unit
Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter Emitter-Base Breakdown Voltage Collector Cut-Off Current ON Characteristics DC Current Gain Dynamic Characteristics Output Capacitance Functional Test Common-Emitter Amplifier Power Gain Collector Efficiency GPE POUT = 7W, VCE = 28Vdc, f = 175MHz POUT = 7W, VCE = 28Vdc, f = 175MHz 8.4 60 12.5 - - - dB % Cob VCB = 30Vdc, IE = 0, f = 0.1 to 1.0MHz - 8.5 15 pf hFE IC = 100mAdc, VCE = 5Vdc 5 - - Symbol Test Conditions Min 4 - Typ - - Max - 1 Unit Vdc mAdc V(BR)EBO IE = 5mAdc, IC = 0 ICBO VCB = 30Vdc, IE = 0
1.065 (27.08) Max .530 (13.46) C .220 (5.58) E .030 (.762) B .305 (7.75)
E
.090 (2.28)
.375 (9.52) Dia .260 (6.60)
.005 (0.15)
.325 (8.28) Dia 8-32 NC-3A Wrench Flat
.075 (1.94) .115 (2.92)
.730 (18.54)


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